Compact Behavioral Modeling and Time Dependent Performance Degradation Analysis of Doping and Junction Less Transistors for Analog Designs

Conclusions The dopingless (DL) JLFET has recently been proposed as a potential candidate that relaxes the requirements of high work function of gate metal electrode and heavy doping throughout from source, channel and drain regions.  Previous studies revealed that the DL-JLFET shows better immunity towards process variation induced random dopant fluctuations in contrast with conventional JLFET because of intrinsic silicon nanowire for formation of source, channel and drain regions. The time dependent performance degradation of DL-JLFET against channel hot carrier (CHC) effect is not yet analyzed. Therefore, time dependent performance degradation of DLJLFET and its comparative study with conventional JLFET is performed analyzed at circuit level through compact behavioral models.